| 摘要 |
An embodiment of the present invention relates to a power rectifier device. The technical objective of the present invention is to provide the power rectifier device which can reduce a forward turn-on voltage, and can improve a switching speed and reverse recovery time, by improving current efficiency per unit area by forming a vertical current flow structure like a MOSFET of a floating gate structure. For this, according to the present invention, disclosed is the power rectifier device comprising: a first conduction type substrate; a first conduction type area which is formed on the first conduction type substrate, and has a trench along a downward direction; a gate electrode embedded in the trench; a second conduction type area which is protruded upward at an outer side of the trench of the first conduction type area; a first conduction type source area which is formed between the trench and the second conduction type area; an anode electrode which is connected to the gate electrode, the second conduction type area and the first conduction type source area; and a cathode electrode connected to the first conduction type substrate. Depth of the trench is larger than depth of the second conduction type area. |
