Integrated Circuitry, Methods of Forming Capacitors, and Methods of Forming Integrated Circuitry Comprising an Array of Capacitors and Circuitry Peripheral to the Array

摘要

A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.

主权项

1. Integrated circuitry including a plurality of electronic devices which individually comprise a pair of conductive electrodes having dielectric there-between, comprising:
a substrate comprising support material there-over, the support material being at least one of semiconductive or conductive; electronic device openings extending into the support material, the electronic device openings comprising at least one of semiconductive or conductive sidewalls; an insulator along the semiconductive and/or conductive electronic device opening sidewalls; and individual electronic devices within individual of the electronic device openings laterally inward of the insulator that is along the semiconductive and/or conductive electronic device opening sidewalls, the electronic devices individually comprising a pair of conductive electrodes having dielectric there-between, one of the pair of conductive electrodes within the respective electronic device openings being laterally adjacent the deposited insulator.