DISPLAY DEVICE

摘要

According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.

主权项

1. A display device comprising thin-film transistor,
the thin-film transistor comprising: a first semiconductor layer including a first region, a second region and a first channel region located between the first region and the second region; a first insulating film formed on the first channel region of the first semiconductor layer; a gate electrode formed on the first insulating film to oppose the first channel region; a second insulating film formed on the gate electrode; a second semiconductor layer formed on the second insulating film to oppose the first semiconductor layer, and including a third region electrically connected to the first region, a fourth region electrically connected to the second region and a second channel region located between the third region and the fourth region to oppose the gate electrode; a first electrode located above the second semiconductor layer and contacting with the third region; and a second electrode located above the second semiconductor layer, separated from the first electrode and contacting with the fourth region, wherein a gap between a bottom surface of the gate electrode and an upper surface of the first channel region, which oppose to each other, is larger than a gap between an upper surface of the gate electrode and a bottom surface of the second channel region, which oppose to each other.