SEMICONDUCTOR DEVICE WITH FINE PITCH REDISTRIBUTION LAYERS

摘要

A semiconductor device with fine pitch redistribution layers is disclosed and may include a semiconductor die with a bond pad and a first passivation layer comprising an opening above the bond pad. A redistribution layer (RDL) may be formed on the passivation layer with one end of the RDL electrically coupled to the bond pad and a second end comprising a connection region. A second passivation layer may be formed on the RDL with an opening for the connection region of the RDL. An under bump metal (UBM) may be formed on the connection region of the RDL and a portion of the second passivation layer. A bump contact may be formed on the UBM, wherein a width of the RDL is less than a width of the opening in the second passivation layer and may be constant from the bond pad through at least a portion of the opening.

主权项

1. A semiconductor device comprising:
a semiconductor die comprising a bond pad; a first passivation layer covering a first surface of the semiconductor die, the first passivation layer comprising an opening above the bond pad; a redistribution layer (RDL) on the first passivation layer with one end of the RDL electrically coupled to the bond pad and a second end comprising a connection region; a second passivation layer on the RDL and on a portion of the first passivation layer, the second passivation layer comprising an opening for the connection region of the RDL; an under bump metal (UBM) on the connection region of the RDL and a portion of the second passivation layer; and a bump contact on the UBM, wherein a width of the RDL is less than a width of the opening in the second passivation layer.