| 发明名称 |
SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR SUBSTRATE, AND CRYSTAL LAMINATE STRUCTURE |
| 摘要 |
Provided are: a Ga2O3-based semiconductor element having excellent heat dissipation characteristics and voltage resistance; a method for manufacturing the semiconductor element; and a semiconductor substrate and a crystal laminate structure that can be used in manufacturing the semiconductor element. As an embodiment, there is provided a Schottky diode (10) having: a base substrate (11) comprising a Ga2O3-based crystal and having a thickness of 0.05-50 μm; and an epitaxial layer (12) comprising a Ga2O3-based crystal, the epitaxial layer (12) being epitaxially grown on the base substrate (11). |
| 申请公布号 |
WO2016013658(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
WO2015JP71114 |
申请日期 |
2015.07.24 |
| 申请人 |
TAMURA CORPORATION;NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY |
发明人 |
SASAKI, KOHEI;KURAMATA, AKITO;HIGASHIWAKI, MASATAKA |
| 分类号 |
H01L21/20;C30B29/16;H01L21/329;H01L21/336;H01L21/337;H01L21/338;H01L29/12;H01L29/24;H01L29/78;H01L29/786;H01L29/808;H01L29/812;H01L29/872 |
主分类号 |
H01L21/20 |
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