发明名称 Method for fabricating heat dissipation substrate
摘要 A method, for fabricating a heat dissipation substrate, includes the steps of: providing a substrate, with the substrate including a metal layer, an insulation layer, and a first conductive layer, with the insulation layer positioned between the metal layer and the first conductive layer, and with the metal layer thicker than the first conductive layer; removing part of the metal layer for forming a metal bulk; providing an adhesive layer including an opening, with the opening corresponding to the metal bulk; providing a second conductive layer; laminating the second conductive layer, the adhesive layer and the substrate; forming a hole in the insulation layer and the first conductive layer, with the hole positioned under the metal bulk; and forming a third conductive layer in the hole.
申请公布号 US9247631(B2) 申请公布日期 2016.01.26
申请号 US201213352553 申请日期 2012.01.18
申请人 Unimicron Technology Corp. 发明人 Chang Chen-Chuan
分类号 H01K3/10;H05K1/02;H01L33/64;H05K3/02;H05K3/40 主分类号 H01K3/10
代理机构 Kamrath IP Lawfirm, P.A. 代理人 Kamrath Alan D.;Kamrath IP Lawfirm, P.A.
主权项 1. A method for fabricating a heat dissipation substrate comprising: providing a first composite board, wherein the first composite board comprises two metal conductive layers and a resin carrier, wherein the resin carrier is positioned between the two metal conductive layers; laminating second and third composite boards outside the two metal conductive layers, wherein each of the second and third composite boards comprises an insulation layer and a thin metal layer, wherein the insulation layers are positioned between the two metal conductive layers and the thin metal layers of the second and third composite boards; thickening each of the thin metal layers; and removing the resin carrier for forming first and second substrates, wherein each of said metal conductive layer forms a first conductive layer and each of said thin metal layers becomes thicker to form a metal layer in each of the first and second substrates, and wherein the metal layer is thicker than the first conductive layer in each of the first and second substrates; and in each of the first and second substrates, removing part of the metal layer for forming a metal bulk; providing an adhesive layer, wherein the adhesive layer comprises an opening, and wherein the opening corresponds to the metal bulk;providing a second conductive layer;laminating the second conductive layer, the adhesive layer, and the substrate, wherein the adhesive layer is positioned above the substrate, and wherein the second conductive layer is above the adhesive layer;forming a hole in the insulation layer and the first conductive layer, wherein the hole is positioned under the metal bulk; andforming a third conductive layer in the hole.
地址 Taoyuan TW