发明名称 Light-emitting device and method for manufacturing the same
摘要 The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.
申请公布号 US9245922(B2) 申请公布日期 2016.01.26
申请号 US201313975586 申请日期 2013.08.26
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Nakamura Osamu;Fujii Gen;Tateishi Fuminori
分类号 H01L29/04;H01L27/15;H01L27/12;H01L29/423;H01L29/66;H01L29/786 主分类号 H01L29/04
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A light-emitting device comprising: a first transistor and a second transistor, each of the first transistor and the second transistor comprising: a gate electrode comprising a conductive material;a semiconductor film; anda gate insulating layer between the gate electrode and the semiconductor film; a first electrode electrically connected to one of a source and a drain of the second transistor; an insulating layer which covers an end portion of the first electrode; a spacer over the insulating layer; an EL layer over the first electrode; a second electrode over the EL layer; a first substrate over the second electrode; and a resin material which fills a space between the second electrode and the first substrate, wherein one of the source and the drain of the first transistor is electrically connected to the gate electrode of the second transistor wherein the semiconductor film does not extend beyond an edge of the gate insulating layer, wherein the spacer is between the first substrate and the insulating layer, and wherein the resin material is in contact with the spacer.
地址 Kanagawa-ken JP