发明名称 Stackable package by using internal stacking modules
摘要 A semiconductor package comprises a substrate, a first semiconductor die mounted to the substrate, and a first double side mold (DSM) internal stackable module (ISM) bonded directly to the first semiconductor die through a first adhesive. The first DSM ISM includes a first molding compound, and a second semiconductor die disposed in the first molding compound. The semiconductor package further comprises a first electrical connection coupled between the first semiconductor die and the substrate, and a second electrical connection coupled between the first DSM ISM and the substrate.
申请公布号 US9245772(B2) 申请公布日期 2016.01.26
申请号 US201414328348 申请日期 2014.07.10
申请人 STATS ChipPAC, Ltd. 发明人 Yang JoungIn;Yim ChoongBin;Kang KeonTeak;Kim YoungChul
分类号 H01L21/44;H01L21/48;H01L21/56;H01L23/14;H01L23/31;H01L23/498;H01L25/03;H01L23/00 主分类号 H01L21/44
代理机构 Patent Law Group: Atkins and Associates, P.C. 代理人 Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C.
主权项 1. A method of making a semiconductor device, comprising: providing a substrate; disposing a first semiconductor die over the substrate; providing a first double side mold (DSM) internal stackable module (ISM) by, (a) providing a platform including conductive traces formed in the platform,(b) disposing a second semiconductor die over a first surface of the platform,(c) disposing a third semiconductor die over a second surface of the platform opposite the first surface of the platform, and(d) depositing a first encapsulant over the second semiconductor die and third semiconductor die; disposing the first DSM ISM over the first semiconductor die after depositing the first encapsulant over the first semiconductor die and third semiconductor die forming a first bond wire between the platform and substrate; and depositing a second encapsulant over the first bond wire, substrate, and first DSM ISM including depositing the second encapsulant over the second semiconductor die and third semiconductor die.
地址 Singapore SG