发明名称 |
Stackable package by using internal stacking modules |
摘要 |
A semiconductor package comprises a substrate, a first semiconductor die mounted to the substrate, and a first double side mold (DSM) internal stackable module (ISM) bonded directly to the first semiconductor die through a first adhesive. The first DSM ISM includes a first molding compound, and a second semiconductor die disposed in the first molding compound. The semiconductor package further comprises a first electrical connection coupled between the first semiconductor die and the substrate, and a second electrical connection coupled between the first DSM ISM and the substrate. |
申请公布号 |
US9245772(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201414328348 |
申请日期 |
2014.07.10 |
申请人 |
STATS ChipPAC, Ltd. |
发明人 |
Yang JoungIn;Yim ChoongBin;Kang KeonTeak;Kim YoungChul |
分类号 |
H01L21/44;H01L21/48;H01L21/56;H01L23/14;H01L23/31;H01L23/498;H01L25/03;H01L23/00 |
主分类号 |
H01L21/44 |
代理机构 |
Patent Law Group: Atkins and Associates, P.C. |
代理人 |
Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C. |
主权项 |
1. A method of making a semiconductor device, comprising:
providing a substrate; disposing a first semiconductor die over the substrate; providing a first double side mold (DSM) internal stackable module (ISM) by,
(a) providing a platform including conductive traces formed in the platform,(b) disposing a second semiconductor die over a first surface of the platform,(c) disposing a third semiconductor die over a second surface of the platform opposite the first surface of the platform, and(d) depositing a first encapsulant over the second semiconductor die and third semiconductor die; disposing the first DSM ISM over the first semiconductor die after depositing the first encapsulant over the first semiconductor die and third semiconductor die forming a first bond wire between the platform and substrate; and depositing a second encapsulant over the first bond wire, substrate, and first DSM ISM including depositing the second encapsulant over the second semiconductor die and third semiconductor die. |
地址 |
Singapore SG |