SEMICONDUCTOR DEVICE

摘要

A semiconductor device 100 includes a plurality of vertical transistors 50 provided to stand from a silicon substrate 1 and having a pillar lower diffusion layer 9 at their end portions on the silicon substrate 1 side, a metal contact plug 31 provided to stand from the silicon substrate 1 and connected to the pillar lower diffusion layer 9 of the plurality of vertical transistors 50, the plurality of vertical transistors 50 are uniformly arranged around the metal contact plug 31 and share the pillar lower diffusion layer 9 and the metal contact plug 31.

主权项

1. A semiconductor device comprising:
a plurality of semiconductor pillars provided to stand from a semiconductor substrate, each of the semiconductor pillars comprising a channel region; a gate insulating film and a gate electrode provided over a side surface of each of the semiconductor pillars; an upper diffusion layer provided at an upper end of each of the semiconductor pillars to serve as one of a source and a drain; a lower diffusion layer operatively coupled to a lower end of each of the semiconductor pillars to serve as the other of the source and the drain; and a lower diffusion layer side contact plug connected to the lower diffusion layer, wherein the semiconductor pillars share the lower diffusion layer and the lower diffusion layer side contact plug, and the semiconductor pillars are uniformly arranged near the lower diffusion layer side contact plug.