发明名称 STABLE ORGANIC PHOTOSENSITIVE DEVICES WITH EXCITON-BLOCKING CHARGE CARRIER FILTERS UTILIZING HIGH GLASS TRANSITION TEMPERATURE MATERIALS
摘要 Disclosed herein are stable organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material having a sufficiently high glass transition temperature, e.g., higher than the temperature or temperature range at which the device typically operates, higher than a highest operating temperature of the device, higher than a threshold temperature value, etc. and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
申请公布号 US2016020418(A1) 申请公布日期 2016.01.21
申请号 US201514803643 申请日期 2015.07.20
申请人 The Regents of the University of Michigan ;University of Southern California 发明人 Forrest Stephen R.;Burlingame Quinn;Xiao Xin;Bergemann Kevie;Panda Anurag;Zimmerman Jeramy D.;Lassiter Brian E.;Thompson Mark E.;Bartynski Andrew N.;Trinh Cong
分类号 H01L51/42;H01L51/44 主分类号 H01L51/42
代理机构 代理人
主权项 1. An organic photosensitive optoelectronic device comprising: two electrodes in superposed relation comprising an anode and a cathode; a photoactive region comprising at least one donor material and at least one acceptor material disposed between the two electrodes to form a donor-acceptor heterojunction, wherein the at least one acceptor material has a Lowest Unoccupied Molecular Orbital energy level (LUMOAcc) and a Highest Occupied Molecular Orbital energy level (HOMOAcc), and the at least one donor material has a Lowest Unoccupied Molecular Orbital energy level (LUMOdon) and a Highest Occupied Molecular Orbital energy level (HOMOdon); and an exciton-blocking electron filter disposed between the cathode and the at least one acceptor material, wherein the electron filter comprises a mixture comprising at least one cathode-side wide energy gap material and at least one electron conducting material, and wherein the at least one cathode-side wide energy gap material has: a Lowest Unoccupied Molecular Orbital energy level (LUMOCS-WG) smaller than or equal to the LUMOAcc;a Highest Occupied Molecular Orbital energy level (HOMOCS-WG) larger than, equal to, or within 0.3 eV smaller than the HOMOAcc; anda HOMOCS-WG-LUMOCS-WG energy gap wider than a HOMOAcc-LUMOAcc energy gap; and wherein the at least one cathode-side wide energy gap material has a glass transition temperature equal to or greater than 85° C.
地址 Ann Arbor MI US