SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device includes, forming, on a substrate, an element isolation insulating film which includes a protruding portion protruding above a level of a surface of the substrate, forming a first film on the substrate and on the element isolation insulating film, polishing the first film to expose the protruding portion, forming a first resist pattern which straddles the first film and the protruding portion after polishing the first film, patterning the first film using the first resist pattern as a mask to form a first pattern, and forming a sidewall film at side surfaces of the first pattern.

主权项

1. A semiconductor device comprising:
a substrate; an element isolation insulating film formed on the substrate, and including a protruding portion protruding above a level of a surface of the substrate; a gate insulating film formed on the substrate; a gate electrode formed on the gate insulating film; and a sidewall film formed at side surfaces of the gate electrode in a gate length direction of the gate electrode, wherein a side surface of the gate electrode in a gate width direction of the gate electrode is covered with the protruding portion.