| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device having high reliability that can suppress voltage drop in the drain region of a junction field effect transistor while keeping the charge transfer efficiency to a high level.SOLUTION: A solid-state image pickup device has a photoelectric conversion part 101 for generating charges in response to incident light, a charge holding part 102 for holding the charges generated by the photoelectric conversion part 101, a JFET 103, a first transfer gate electrode 105 for controlling the potential between the photoelectric conversion part 101 and the charge holding part 102, a second transfer gate electrode 106 for controlling the potential between the charge holding part 102 and the gate region 201 of the JFET 103, and a semiconductor region 204 which is disposed at the lower portion of the charge holding part 102 and constitutes PN junction with the charge holding part 102. The impurity concentration of the semiconductor region 204 is higher than the impurity concentration at the same depth site as the semiconductor region 204 in a lower region of the first transfer gate electrode 105, and also higher than the impurity concentration of the channel part 202 of the JFET 103. |
