发明名称 SEMICONDUCTOR DEVICE
摘要 The present invention is to prevent a reduction in the converting speed between a transistor and a cathode, due to the inductance of wiring between a drain electrode and a cathode electrode of a diode. On a printed circuit board, the transistor and the diode are formed. The transistor and the diode are arranged in a first direction. On the printed circuit board, a first wiring, a first divergence wiring, and a second divergence wiring are formed. The first wiring is extended between the transistor and the diode. The first divergence wiring is extended in the direction of overlapping the transistor from the first wiring, and is connected to the transistor. The second divergence wiring is extended in the direction of overlapping the diode from the first wiring, and is connected to the diode.
申请公布号 KR20160006117(A) 申请公布日期 2016.01.18
申请号 KR20150095344 申请日期 2015.07.03
申请人 RENESAS ELECTRONICS CORPORATION 发明人 MIURA YOSHINAO
分类号 H01L29/66;H01L27/095;H01L29/808;H01L29/812 主分类号 H01L29/66
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