| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which increase electrostatic capacitance and inhibit deterioration in breakdown voltage.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a lower layer electrode on a substrate; a process of covering a circumference of the lower layer electrode and a top face end of the lower layer electrode to form a first insulation film; a process of forming a second insulation film along a top face central part of the lower layer electrode except the top face end and lateral faces and a top face of the first insulation film; and a process of forming an upper layer electrode on the second insulation film. |
