发明名称 DEPOSITION DEVICE AND DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a deposition device which performs batch type ALD deposition by suppressing reduction in production tact as much as possible, enhancing a utilization efficiency of process gas, and suppressing generation of reaction products in an exhaust path without increasing a gas supply amount.SOLUTION: A batch type deposition device 100 comprises: a plurality of processing chambers 15; a gas supply unit 2; an exhaust unit 3; and a controller 4. The exhaust unit 3 has two exhaust paths respectively corresponding to a first process gas and a second process gas, and exhaust path switching parts 34 and 35 for switching between the two exhaust paths. When supplying the first process gas and the second process gas from the gas supply unit 2 to the processing chamber 15, the controller 4 controls the gas supply unit 2 so that one process gas is sequentially supplied to each processing chamber with a time difference, and controls the exhaust path switching parts 34 and 35 so that the one process gas is exhausted via an exhaust path corresponding to the process gas supplied to each processing chamber 15.
申请公布号 JP2016009724(A) 申请公布日期 2016.01.18
申请号 JP20140128469 申请日期 2014.06.23
申请人 TOKYO ELECTRON LTD 发明人 SEMBA SHOHEI;SATOYOSHI TSUTOMU;TANAKA SEIJI
分类号 H01L21/31;C23C16/455;H01L21/316 主分类号 H01L21/31
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