SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film. The metal film is made of one or more metals selected from the group consisting of Pd, Au, Ru, Rh, Pt, and Ir.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a first insulating film formed over the semiconductor substrate; a pad formed over the first insulating film; a second insulating film formed over the first insulating film so as to cover the pad; and an opening formed in the second insulating film to expose a part of the pad, wherein the pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component, wherein, over the Al-containing conductive film in a region overlapping the opening in plan view, a first laminated film including a first conductor film, and a second conductor film over the first conductor film is formed, wherein the second conductor film is in an uppermost layer of the first laminated film, wherein the first conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a titanium film, a titanium nitride film, a tantalum film, a tantalum nitride film, a tungsten film, a tungsten nitride film, a titanium-tungsten film, and a tantalum-tungsten film, and wherein the second conductor film is made of one or more metals selected from the group consisting of palladium, gold, ruthenium, rhodium, platinum, and iridium.