发明名称 |
3D NON-VOLATILE MEMORY HAVING LOW-CURRENT CELLS AND FABRICATION THEREOF |
摘要 |
A 3D array of nonvolatile memory has each read/write element accessed at a crossing between a word line and a bit line. The read/write element forms a tubular electrode having an outside shell of R/W material enclosing an oxide core. In a rectangular form, one side of the electrode contacts the word line and another side contacts the bit line. The thickness of the shell rather than its surface areas in contact with the word line and bit line determines the conduction cross-section and therefore the resistance. By adjusting the thickness of the shell, independent of its contact area with either the word line or bit line, each read/write element can operate with a much increased resistance and therefore much reduced current. Processes to manufacture a 3D array with such tubular R/W elements 3D array are also described. |
申请公布号 |
EP2965361(A1) |
申请公布日期 |
2016.01.13 |
申请号 |
EP20140710775 |
申请日期 |
2014.03.05 |
申请人 |
SANDISK 3D LLC |
发明人 |
CERNEA, RAUL-ADRIAN;CHEN, YUNG-TIN;SAMACHISA, GEORGE |
分类号 |
H01L27/24;G11C13/00 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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