发明名称 |
Low resistance polysilicon strap |
摘要 |
A low resistance polysilicon (poly) structure includes a first poly coupled to a substrate and having a sidewall. A second poly is separated from the sidewall of the first poly and the substrate by a programming oxide. The first poly and the second poly have substantially a same planarized height above the substrate. The first poly extends from a device region to a strap region, and extends substantially parallel to a first length of the second poly. A second length of the second poly extends away from the first poly in the strap region and includes a salicide. A first diffusion region crosses the first poly and the second poly in the device region. A masked width of the first length of the second poly is defined by an etched spacer. A low resistance contact is coupled to the second length of the second poly in the strap region. |
申请公布号 |
US9236498(B1) |
申请公布日期 |
2016.01.12 |
申请号 |
US201414470894 |
申请日期 |
2014.08.27 |
申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Roy Anirban;Swift Craig T. |
分类号 |
H01L27/115;H01L29/792;H01L29/66 |
主分类号 |
H01L27/115 |
代理机构 |
Atesa Legal LLC |
代理人 |
Atesa Legal LLC |
主权项 |
1. A method for manufacturing a low resistance polysilicon (poly) strap comprising:
fabricating a structure including a programming oxide separating a first poly from a second poly, the second poly separating the programming oxide from an insulator, the first poly extending from a device region to a strap region, the first poly extending substantially parallel to a first length of the second poly, a second length of the second poly extending away from the first poly in the strap region, and a first diffusion region crossing the first poly and the second poly in the device region; etching the insulator to form a spacer, the spacer defining a masked width of the first length of the second poly; etching the second poly excluded by the spacer in the device region to a first depth to leave the masked width of the first length of the second poly and etching the second poly excluded by a mask in the strap region to leave the second length of the second poly; forming a salicide on at least the second length of the second poly; planarizing the first poly and the second poly to a second depth by substantially removing the spacer; and forming a contact with the second length of the second poly in the strap region. |
地址 |
Austin TX US |