Solid-state image pickup element and image pickup apparatus

摘要

Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.

主权项

1. A solid-state image pickup element, comprising:
a plurality of photoelectric conversion regions; a respective transfer transistor for each photoelectric conversion region; a transistor in common for the photoelectric conversion regions; an isolation region of a first conductivity type isolating said photoelectric conversion regions and said transistors from each other; a well region of the first conductivity type having said photoelectric conversion regions, said transistor, and said isolation region formed therein; a contact portion formed on said isolation region via which an electric potential that fixes said well region to a given electric potential can be supplied; and an impurity region of the first conductivity type in said isolation region and between said contact portion and said photoelectric conversion regions, said impurity region formed so as to extend in a depth direction from a surface of said isolation region and having a higher impurity concentration than that of said isolation region, wherein,
in plan view, said isolation region is formed so as to have a planar pattern including therein a region of a second conductivity type of said transistor, and said contact portion, andin plan view, said impurity region is between the region of the second conductivity type of said transistor and said contact portion.