Silane and borane treatments for titanium carbide films

摘要

Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane or a borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

主权项

1. A process for forming a carbon containing titanium thin film on a substrate comprising depositing a carbon-containing titanium thin film on the substrate by a process comprising a plurality of deposition cycles, at least one cycle comprising:
alternately contacting the substrate with a first gaseous source chemical that comprises a titanium halide and a second gaseous source chemical that comprises a metal and an organic ligand, wherein substrate is exposed to purge gas and/or vacuum in between contacting the substrate with the first gaseous source chemical and the second gaseous source chemical; and subsequently exposing the carbon-containing titanium thin film to a silane or a borane, wherein after exposing the carbon-containing titanium thin film to the silane or the borane agent, the carbon-containing titanium film comprises less than about 40% titanium on an atomic basis.