| 发明名称 |
METHOD FOR THE PRODUCTION OF MONOLITHIC WHITE DIODES |
| 摘要 |
The invention relates to a method for the production of a light-emitting diode, characterised in that the method comprises a step of preparing a light-emitting layer (20) on a front face of a support (10), said emitting layer comprising at least two adjacent quantum wells (21, 22, 23) emitting at different wavelengths, said quantum wells (21, 22, 23) being in contact with the front face of the support. According to the invention, the step in which the light-emitting layer is deposited comprises a sub-step consisting in locally varying the temperature of a rear face of the support opposite the front face such that the front face of the support comprises at least two zones at different temperatures. |
| 申请公布号 |
US2016005918(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201414763067 |
申请日期 |
2014.01.24 |
| 申请人 |
Centre National de la Recherche Scientifique (CNRS) |
发明人 |
Nataf Gilles;De Mierry Philippe;Chenot Sébastien |
| 分类号 |
H01L33/06;H01L33/00 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of production of a light-emitting diode comprising a step of preparing a light-emitting layer on a front face of a support, said emitting layer comprising at least two adjacent quantum wells emitting at different wavelengths, said quantum wells being in contact with the front face of the support. |
| 地址 |
Paris FR |
