Capacitor and method of forming same

摘要

A device comprises a substrate having at least one active region, an insulating layer above the substrate, and an electrode in a gate electrode layer above the insulating layer, forming a metal-oxide-semiconductor (MOS) capacitor. A first contact layer is provided on the electrode, having an elongated first pattern extending in a first direction parallel to the electrode. A contact structure contacts the substrate. The contact structure has an elongated second pattern extending parallel to the first pattern. A dielectric material is provided between the first and second patterns, so that the first and second patterns and dielectric material form a side-wall capacitor connected in parallel to the MOS capacitor.

主权项

1. A device, comprising:
a semiconductor substrate; a gate electrode layer above the semiconductor substrate; an interconnect structure above the gate electrode layer, the interconnect structure having one or more conductive pattern layers; and at least one side-wall capacitor including a contact layer having a portion abutting the gate electrode layer, the at least one side-wall capacitor extending no lower than a lowest portion of the gate electrode layer and extending no higher than a highest portion of the contact layer.