| 发明名称 | Self-healing crack stop structure | ||
| 摘要 | A self-healing crack stop structure and methods of manufacture are disclosed herein. The structure comprises a crack stop structure formed in one or more dielectric layers and surrounding an active region of an integrated circuit chip. The crack stop comprises self healing material which, upon propagation of a crack, is structured to seal the crack and prevent further propagation of the crack. | ||
| 申请公布号 | US9230921(B2) | 申请公布日期 | 2016.01.05 |
| 申请号 | US201314048838 | 申请日期 | 2013.10.08 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Ayotte Stephen P.;Cote Alissa R.;Lyons Kendra A.;Malinowski John C.;Pierce Benjamin J. |
| 分类号 | H01L23/00;H01L21/311;H01L21/3105;H01L21/02;H01L23/31 | 主分类号 | H01L23/00 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Canale Anthony;Calderon Andrew M.;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A structure comprising a crack stop structure formed on one or more dielectric layers on outermost edge surfaces of a diced integrated circuit chip to completely surround an active region of the diced integrated circuit chip, the crack stop comprising self healing material which, upon propagation of a crack, is structured to seal the crack and prevent further propagation of the crack. | ||
| 地址 | Grand Cayman KY | ||