METHOD FOR FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMING SEMICONDUCTOR DEVICES USING THE SAME, AND SEMICONDUCTOR DEVICES FORMED BY USING THE SAME

摘要

Provided is a method for forming fine patterns of a semiconductor device. The method of the present invention comprises the steps of: providing a substrate including a first area and a second area; forming a flat panel unit covering the first area on the substrate and a conductive film including multiple first protruding units extended from the flat panel unit in a first direction parallel to the top surface of the substrate to cover a part of the second area; forming first mask patterns on the conductive film to be extended in the first direction and to be separated from each other in a second direction crossing the first direction; forming second mask patterns on the substrate of the second area to cover the first protruding units; and forming conductive patterns by patterning the conductive film with an etching mask. From a planar perspective, each of the first protruding units is overlapped with one among the first mask patterns.