发明名称 PLACING TABLE AND PLASMA PROCESSING APPARATUS
摘要 The difference between a setting temperature of an object to be processed and a setting temperature of a focus ring is made large. According to an embodiment, provided is a placing table configured to place the object to be processed thereon. The placing table comprises: an electrostatic chuck configured to absorb the object to be processed; a support part configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member wherein the second region surrounds the first region. The support part comprises: an intermediate layer made of a ceramic sintered object and supported on the second region via an adhesive; a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; and a heater electrode installed in the thermally sprayed ceramic layer and formed by the thermal spraying method.
申请公布号 KR20160000419(A) 申请公布日期 2016.01.04
申请号 KR20150085864 申请日期 2015.06.17
申请人 TOKYO ELECTRON LIMITED 发明人 KITAGAWA DAI
分类号 H01L21/3065;H01L21/324;H01L21/683 主分类号 H01L21/3065
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