发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor light-emitting element includes: a double-mesa structure of semiconductor formed to have a cylindrical cross section; an insulating member formed to fill a space surrounding the double-mesa structure, with the insulating member comprising a lower insulating member and an upper insulting member covering the lower insulating member; and a first electrode formed on the upper insulating member to come into contact with part of a top surface of the double-mesa structure. The lower insulating member has multiple lower air pillars that are formed in an area aligning with the first electrode, and the upper insulating member has multiple upper air pillars that are formed around the first electrode. It has low dielectric constant and reduced electrical parasitics especially parasitic capacitances, thereby improving high frequency performance and improving modulation speed of light-emitting device finally.
申请公布号 US2015380606(A1) 申请公布日期 2015.12.31
申请号 US201414319251 申请日期 2014.06.30
申请人 SAE Magnetics (H.K.) Ltd. 发明人 PADULLAPARTHI Babu Dayal
分类号 H01L33/20;H01L33/00;H01L33/38;H01L33/56;H01L33/10;H01L33/06 主分类号 H01L33/20
代理机构 代理人
主权项 1. A semiconductor light-emitting element comprising: a double-mesa structure of semiconductor formed to have a cylindrical cross section; an insulating member formed to fill a space surrounding the double-mesa structure, with the insulating member comprising a lower insulating member and an upper insulting member covering the lower insulating member; and a first electrode formed on the upper insulating member to come into contact with part of a top surface of the double-mesa structure; wherein the lower insulating member has multiple lower air pillars in the form of a matrix that are formed in an area aligning with the first electrode, and the upper insulating member has multiple upper air pillars surrounding the first electrode.
地址 Hong Kong CN