SEMICONDUCTOR DEVICES AND FABRICATION METHOD THEREOF

摘要

A method for fabricating a semiconductor device includes providing a substrate; and forming at least one dummy gate structure on the substrate. The method also includes forming doping regions in the substrate at both sides of the dummy gate structure; forming an interlayer dielectric layer on the d the dummy gate structure; performing a first step thermal annealing process to increase a density of the interlayer dielectric layer; and activating doping ions for a first time without an excess diffusion of the doping ions in the doping region; and removing the dummy gate structure to expose the surface of the substrate to form a trench in the annealed interlayer dielectric layer. Further, the method also includes forming a gate dielectric layer on the surface of the substrate on bottom of the trench; and performing a second step thermal annealing process to activate the doping ions for a second time.

主权项

1. A method for fabricating a semiconductor device, comprising:
providing a substrate; forming at least one dummy gate structure on a surface of the substrate; forming doping regions in the surface of the substrate at both sides of the dummy gate structure; forming an interlayer dielectric layer on the surface of the substrate and a side surface of the dummy gate structure; performing a first step thermal annealing process onto the interlayer dielectric layer and the doping regions to increase density of the interlayer dielectric layer and activate doping ions in the doping regions for the first time without an excess diffusion of the doping ions in the doping regions; removing the dummy gate structure to expose the surface of the substrate to form a trench in the annealed interlayer dielectric layer; forming a gate dielectric layer on the surface of the substrate on bottom of the trench; and performing a second step thermal annealing process onto the gate dielectric layer and the doping regions to activate the doping ions in the doping regions for a second time and increase the density of the gate dielectric layer.