SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.

主权项

1. A semiconductor memory device, comprising:
a stacked body including
a plurality of stacked units, each of the stacked units including a plurality of electrode layers and a plurality of insulating layers, each of the insulating layers being provided between the electrode layers, anda first intermediate layer provided between the stacked units, the first intermediate layer being made of a material different from the electrode layers and the insulating layers; and a plurality of columnar portions including
a channel body extending in a stacking direction of the stacked body to pierce the stacked body, anda charge storage film provided between the channel body and the electrode layers.