SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

Silicon-containing gas, carbon-containing gas, and chlorine-containing gas are introduced into a reacting furnace. Next, a SiC epitaxial film is grown on the front surface of a 4H-SiC substrate by a halide CVD method in a mixed gas atmosphere made of the plurality of gasses introduced. In the SiC epitaxial film growing, a SiC epitaxial film of a first predetermined thickness is grown at a first growth rate. The first growth rate is increased from an initial growth rate to a higher growth rate. Furthermore, the SiC epitaxial film is grown, at a second growth rate, until the thickness of the SiC epitaxial film reaches a second predetermined thickness. By so doing, it is possible to improve the crystallinity of a silicon carbide semiconductor film grown in a gas atmosphere containing halide.

主权项

1. A silicon carbide semiconductor device manufacturing method, whereby a silicon carbide epitaxial film is grown on a silicon carbide semiconductor substrate by a chemical vapor deposition method using a mixed gas atmosphere made of silicon-containing gas, carbon-containing gas, and chlorine-containing gas, comprising:
a first growth step which grows the silicon carbide epitaxial film, while increasing a first growth rate at a constant rate, until a thickness of the silicon carbide epitaxial film reaches a first predetermined thickness; and a second growth step which grows the silicon carbide epitaxial film at a second growth rate equal to or higher than the first growth rate, which is at an end of the first growth step, after the first growth step until the thickness of the silicon carbide epitaxial film reaches a second predetermined thickness larger than the first predetermined thickness.