LAYER-BY-LAYER DEPOSITION OF CARBON-DOPED OXIDE FILMS THROUGH CYCLICAL SILYLATION

摘要

Embodiments of the present invention generally relate to methods of forming carbon-doped oxide films. The methods generally include generating hydroxyl groups on a surface of the substrate using a plasma, and then performing silylation on the surface of the substrate. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma in order to perform an additional silylation. Multiple plasma treatments and silylations may be performed to deposit a layer having a desired thickness.

主权项

1. A method of depositing a carbon-doped silicon oxide film, comprising:
exposing a substrate to a first plasma treatment; exposing the substrate to a water-containing gas to form hydroxyl groups on a surface of the substrate; debonding water molecules from the surface of the substrate; performing silylation on the surface of the substrate; and regenerating the surface for additional silylation, the regeneration comprising:
exposing the substrate to a second plasma treatment; andexposing the substrate to the water-containing gas to form hydroxyl groups on the surface of the substrate.