| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR. |
| 申请公布号 |
US2015372154(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201514796375 |
申请日期 |
2015.07.10 |
| 申请人 |
ROHM CO., LTD. |
发明人 |
AKETA Masatoshi;YOKOTSUJI Yuta |
| 分类号 |
H01L29/872;H01L29/20;H01L29/06;H01L29/16 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first conductivity type semiconductor layer made of a wide bandgap semiconductor with a trench having a side wall and a bottom wall formed on a side of a surface of the semiconductor layer, and a Schottky electrode formed to come into contact with the surface of the semiconductor layer, wherein an edge part of the bottom wall of the trench has a curvature radius R that satisfies the following formula (1):
0.01L<R<10L (1)(in formula (1), L designates a linear distance between edge parts facing each other along a width direction of the trench.) |
| 地址 |
Kyoto JP |
