Semiconductor device and method of manufacturing the same

摘要

A semiconductor device has a semiconductor layer, a floating gate electrode provided over the semiconductor layer via a first insulation film, and an erase gate electrode to which an erase voltage is applied. The floating gate electrode has an opposing region that opposes via a second insulation film to the erase gate electrode. The opposing region has such a shape that multiple electric field concentrating portions are formed when the erase voltage is applied to the erase gate electrode.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a floating gate electrode provided over the semiconductor layer via a first insulation film; and an erase gate electrode to which an erase voltage is applied, wherein the floating gate electrode has an opposing region that opposes via a second insulation film to the erase gate electrode, and wherein the opposing region has such a shape that a plurality of electric field concentration portions are formed when the erase voltage is applied to the erase gate electrode, wherein a cross sectional shape of the floating gate electrode has a plurality of corners in the opposing region, and wherein a plurality of portions are formed to the erase gate electrode so as to conform to the plurality of corners.