Method for separating epitaxial layer from growth substrate

摘要

The present invention provides a method for separating an epitaxial layer from a growth substrate, comprising growing an epitaxial layer including a plurality of layers on a growth substrate; etching an edge of at least one layer in the epitaxial layer to form a notch; forming a bonding layer on the epitaxial layer, contacting a bonding substrate onto the bonding layer, and then heating the bonding layer to a bonding temperature for joining the epitaxial layer and the bonding substrate; and cooling the bonding layer after the heating of the boding layer, so that the epitaxial layer and the bonding substrate are joined by the bonding layer, and the epitaxial layer is separated from the growth substrate, wherein the separating the epitaxial layer from the growth substrate starts with separation from the at least one layer where the notch is formed.

主权项

1. A method for separating an epitaxial layer from a growth substrate, the method comprising:
growing an epitaxial layer on a growth substrate, the epitaxial layer comprising:
growing a doped semiconductor layer on the growth substrate; andgrowing an undoped semiconductor layer on the doped semiconductor layer; forming a notch in an edge of the epitaxial layer, wherein the notch is formed by selectively etching the doped semiconductor layer after forming the undoped semiconductor layer; forming a bonding layer on the epitaxial layer, disposing a bonding substrate on the bonding layer, and then heating the bonding layer to a bonding temperature to join the epitaxial layer and the bonding substrate; cooling the bonding layer after heating the bonding layer, so that the epitaxial layer and the bonding substrate are joined by the bonding layer; and separating the epitaxial layer from the growth substrate, wherein separating the epitaxial layer from the growth substrate comprises first separating the epitaxial layer starting at the notch.