发明名称 FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THERE FROM
摘要 The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material.; The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.
申请公布号 EP2155419(A2) 申请公布日期 2010.02.24
申请号 EP20080755010 申请日期 2008.05.02
申请人 H.C. STARCK INC.;H.C. STARCK GMBH 发明人 MILLER, STEVEN, A.;KUMAR, PRABHAT;WU, RICHARD;SUN, SHUWEI;ZIMMERMANN, STEFAN;SCHMIDT-PARK, OLAF
分类号 B22F1/00;C22C1/04;C23C4/12;C23C14/34 主分类号 B22F1/00
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