| 摘要 |
<p>PURPOSE: A non-volatile memory device based on silicon carbide of dual gate structure is provided to keep a uniform current level against temperature increase, thereby improving the device characteristics. CONSTITUTION: A 4H-SiC dual gated FET semiconductor device, non-volatile memory device, comprises a PZT material for information storage. The PZT material stores information by the polarization of ferroelectric material. A buffer layer made of Al2O3 is used in order to improve contact characteristic between 4H-SiC of the semiconductor substrate and the PZT material. A gate is formed in a P-N junction structure. A current level is controlled by regulating the depletion layer through the gate bias.</p> |
