发明名称 |
Methods of manufacturing semiconductor devices including a doped silicon layer |
摘要 |
Methods for manufacturing a semiconductor device include forming a seed layer containing a silicon material on a substrate. An amorphous silicon layer containing amorphous silicon material is formed on the seed layer. The amorphous silicon layer is doped with an impurity. A laser beam is irradiated onto the amorphous silicon layer to produce a phase change of the amorphous silicon layer and change the amorphous silicon layer into a single-crystal silicon layer based on the seed layer.
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申请公布号 |
US2009104759(A1) |
申请公布日期 |
2009.04.23 |
申请号 |
US20080284565 |
申请日期 |
2008.09.23 |
申请人 |
KANG PIL-KYU;SON YONG-HOON;LEE JONG-WOOK |
发明人 |
KANG PIL-KYU;SON YONG-HOON;LEE JONG-WOOK |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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