发明名称 Methods and Systems for Forming at Least One Dielectric Layer
摘要 A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
申请公布号 US2009104764(A1) 申请公布日期 2009.04.23
申请号 US20070876649 申请日期 2007.10.22
申请人 APPLIED MATERIALS, INC. 发明人 XIA LI-QUN;BALSEANU MIHAELA;NGUYEN VICTOR;WITTY DEREK R.;M'SAAD HICHEM;YANG HAICHUN;LU XINLIANG;KAO CHIEN-TEH;CHANG MEI
分类号 H01L21/3205;C23F1/00;H01L21/311 主分类号 H01L21/3205
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