| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of driving a nonvolatile memory device having three-level nonvolatile memory cells and a nonvolatile memory device using the method. <P>SOLUTION: The method of driving a nonvolatile memory device having three-level nonvolatile memory cells provides a memory cell array containing a first nonvolatile memory cell, a second nonvolatile memory cell and a third nonvolatile memory cell. Each nonvolatile memory cell stores one of first data, second data, and third data. The first data, second data and third data respectively correspond to a first resistance level L1, a second resistance level L2 and a third resistance level L3, each of which is different from one another. The first data is written to the first nonvolatile memory cell and the third data is written to the third nonvolatile memory cell during a first interval of a write operation. The second data is written to the second nonvolatile memory cell during a second interval of the write operation. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
