| 摘要 |
A dry etching apparatus is provided to improve cooling efficiency in an upper electrode by increasing a moving area of the cooling air by using a plurality of partitions installed inside a cooling plate. A vacuum chamber(100) has an upper electrode and a lower electrode. A gas supply unit(200) is connected to a vacuum chamber and supplies the gas inside the vacuum chamber. An air supply unit(300) is connected to the vacuum chamber and supplies the air. A high frequency generating unit(400) is connected to the vacuum chamber and forms the high frequency electric field inside the vacuum chamber. The gas is converted into the plasma state by the high frequency electric field. A vacuum pump(700) is connected to the vacuum chamber. The vacuum chamber is contacted with the upper electrode(110). An air moving path is formed in a cooling plate(120).
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