| 摘要 |
PROBLEM TO BE SOLVED: To simply manufacture unipolar and bipolar transistors with different conductivity types in the body and base regions in the same semiconductor substrate of a semiconductor device and obtain an impurity injecting pattern by an impurity injecting process at a time wherein its impurity ion injecting density varies in the same depth depending on the injecting places thereof. SOLUTION: In a first partition region 20 of an active layer 14, an unipolar type semiconductor element 2 having a reduced surface region 27 as a p-type deep layer 7a and having a drift region 26 as an n-type shallow layer 6a is formed. In a second partition region 40 thereof, a bipolar type semiconductor element 4 having a buried collector region 47 as the p-type deep layer 7a and having a base region 46 as the n-type shallow layer 6a is formed. Hereupon, in order to form an injecting pattern wherein its impurity ion injecting density in the same depth varies depending on the injecting places thereof, a field oxide film is formed on one region and impurity ions are injected simultaneously into both regions. COPYRIGHT: (C)2009,JPO&INPIT
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