| 摘要 |
A semiconductor device and a method of manufacture thereof are provided to use LIGBT so that the performance degradation of different parameters which is considered in manufacturing the high voltage power control device is prevented. A semiconductor device comprises a wafer, a first electrode domain(200), and a second electrode domain(100). The first electrode domain comprises a P-type junction(P+) within a N- buffer(150) formed in the wafer. The second electrode domain comprises a first impurity diffusion region and a second impurity diffusion region. The first impurity diffusion region comprises a NP type junction(N+/P+/N+) within a first P- base(140) formed in the wafer. The second impurity diffusion region comprises a P-type junction(180) which is deep within a second P- base(160) formed in the wafer.
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