METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent contact of a damascene word line and a buried bit line by preventing the damage of the pillar pattern in forming the damascene word line through a first and second capping layer. CONSTITUTION: A method for fabricating a semiconductor device is comprised of the steps: forming a plurality of pillar patterns on a substrate(31); forming an impurity region between the pillar patterns; forming a gate electrode(38) covering a part of the pillar pattern; forming a first capping layer(39A) in the whole of a substrate in which the gate electrode is formed; separating the impurity region and forming a separation film(40) covering the first capping layer between the gate electrodes; and removing remainder of the first capping layer excluding a part of first capping layer contacting with the separation film.