| 摘要 |
A Schottky barrier diode (1) is provided with a GaN self-supporting substrate (2) having a surface (2a), a GaN epitaxial layer (3) formed on the surface (2a), and an insulating layer (4) formed on the surface (3a) of the GaN epitaxial layer (3) with an opening formed thereon. The Schottky barrier diode is also provided with an electrode (5). The electrode (5) is composed of a Schottky electrode formed inside the opening to be brought into contact with the GaN epitaxial layer (3), and a field plate electrode, which is connected to the Schottky electrode and formed to overlap the insulating layer (4). The dislocation density of the GaN self-supporting substrate (2) is 1x10cmor less. |
