| 摘要 |
A method for fabricating a CMOS image sensor may include forming an isolation layer defining an active area on a semiconductor substrate, forming first and second gate electrodes in the transistor area of the semiconductor substrate, forming a photodiode area in the semiconductor substrate at a first side of the first gate electrode, forming an oxide layer over the photodiode area, the oxide layer having a thickness greater than that of the dielectric layer, forming a source/drain extension area in the semiconductor substrate at a second side of the second gate electrode and between the first and second gate electrodes, forming source/drain regions in the transistor area of the semiconductor substrate by ion implantation through the dielectric layer, and forming a complementary ion implantation region in the photodiode area through the oxide layer.
|
