| 摘要 |
<p>A semiconductor device and a method for forming the same are provided to reduce a manufacturing cost by reducing an SOI(Silicon-On-Insulation) substrate by forming a mat part of a cell part with the SOI structure to implement the characteristic of the SOI device. A first pad insulating layer(13) defining a device isolation area of a bar type arranged in a semiconductor substrate(11) is formed. A first trench is formed using the first pad insulating layer as a mask. A bulb(19) is formed by etching a lower part of the first trench. The floated semiconductor substrate(21) is provided by forming a bury insulation layer to bury the bulb. The device isolation layer buries the interval between the first pad insulating layers. The first pad insulation layer is removed and a second pad insulating layer exposing the device isolation area positioned between the axial direction of the bar type is formed.</p> |
