| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing an SiC Schottky barrier diode which can suppress an increase in leakage current at the time of a reverse bias without generating surface roughness. SOLUTION: The method for manufacturing an SiC Schottky barrier diode 20 is provided with: (a) a step of preparing a first conductivity type SiC base 12; (b) a step of selectively implanting second conductivity type impurity ion in the SiC base 12; (c) a step of forming a termination structure by performing heat treatment on the SiC base 12 to activate the second conductivity impurity; (d) a step of removing a membrane deteriorated layer 7 generated on the surface of the SiC base 12 at the time of heat treatment by performing polishing 8 on the surface of the SiC base 12; (e) a step of performing dry etching 9 on the surface of the SiC base 12 after the step (d); and (f) a step of forming a Schottky electrode 10 on the SiC base 12 after the step (e). COPYRIGHT: (C)2009,JPO&INPIT |
