| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device and an insulating film forming method by which an insulating film uniform in film thickness and film quality can be formed on a substrate surface by uniformizing the density distribution of plasma generated between parallel flat plate electrodes. SOLUTION: The plasma CVD device comprises: a process chamber 11 into which a process gas is supplied; the parallel flat plate electrodes 16 provided in the process chamber 11 and including an upper electrode 12, a lower electrode 13 mounted on the substrate and a substrate conveyance unit 15 stored in a recessed portion of the lower electrode 13; and a high-frequency power source 19 which generates plasma between the parallel flat plate electrodes 16, and decomposes the process gas with the plasma to form the insulating film on the substrate. Wherein, the surface of the lower electrode 13 on the plasma generation side and the surface of the substrate conveyance unit 15 on the plasma generation side are made of the same material. COPYRIGHT: (C)2009,JPO&INPIT
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