| 摘要 |
A digital circuit comprises: a first arm including a first metal oxide semiconductor field effect transistor (M3) configured to act as a load device; a second arm including a second metal oxide semiconductor field effect transistor (M4) configured to act as a load device; and a switch (M1, M2) for selecting one of the first and second arms. Each of the first and second transistors (M3, M4) has a channel length of 100 nm or below and is biased to operate in the weak inversion regime. In an alternative circuit, each load device (M3, M4) has its bulk connected to its drain and is biased to operate in the weak inversion regime.
|
