| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method that can cool not only a wafer, but also a tray during plasma processing. SOLUTION: The wafer 10 is put in an opening 11a formed in the tray 11 first, and a lower-surface peripheral edge of the wafer 10 is held by a holding member 13 provided on a lower surface of the tray 11. Then the tray 11 and a lower electrode 12 as an electrostatic chuck are put closer to each other to insert the holding member 13 into a recess 14 formed in the lower electrode 12, the tray 11 is mounted on a tray mounting part of the lower electrode 12, and the wafer 10 is mounted on the wafer mounting part. Then while the wafer 10 and tray 11 are held by the electrostatic chuck, the wafer 10 and tray 11 are cooled by a cooling mechanism. When the wafer 10 is subjected to plasma process in this state, the wafer 10 and tray 11 are both cooled during the plasma processing, so that the wafer 10 is unlikely to have a temperature difference between a center part and an outer peripheral part thereof, thereby improving uniformity of etching. COPYRIGHT: (C)2011,JPO&INPIT |
