| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having a structure which is low-cost and excellent in productivity and yield, and to provide a method of manufacturing the same. SOLUTION: A first opening 128 on first metal wiring 119 on a substrate and a second opening 129 on second metal wiring 121 are formed at the same time. Then a conductive film 120 is deposited over the entire surface, so that the deposited conductive film is uneven in film thickness in the first opening having small opening area and a local thin-film region where the conductive film is deposited to a thicker thickness is formed at a border part between a bottom and a sidewall of the first opening. The conductive film in the local thin-film region is completely oxidized, but the conductive film is oxidized to such a film thickness that unoxidized conductive films are left on the bottom and sidewall, and consequently the conductive film 122 on the bottom and the conductive film 126 on the sidewall are separated via a variable resistor which is an oxidized film of the conductive film in the first opening 128, thereby forming a variable resistance element 104. Meanwhile, a contact connecting the conductive film and second metal wiring to each other is formed in the second opening. COPYRIGHT: (C)2011,JPO&INPIT |
